1. Product Scientific Research and Structural Stability

1.1 Crystal Chemistry and Bonding Characteristics

(Silicon Carbide Crucibles)

Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms set up in a tetrahedral lattice, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing outstanding atomic bond stamina.

The Si– C bond, with a bond energy of approximately 318 kJ/mol, is amongst the greatest in architectural ceramics, conferring exceptional thermal stability, solidity, and resistance to chemical assault.

This robust covalent network results in a material with a melting factor going beyond 2700 ° C(sublimes), making it one of one of the most refractory non-oxide ceramics offered for high-temperature applications.

Unlike oxide ceramics such as alumina, SiC keeps mechanical strength and creep resistance at temperature levels over 1400 ° C, where lots of metals and standard porcelains begin to soften or break down.

Its reduced coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for rapid thermal cycling without tragic cracking, a vital attribute for crucible efficiency.

These inherent properties originate from the well balanced electronegativity and similar atomic sizes of silicon and carbon, which promote a very secure and densely packed crystal framework.

1.2 Microstructure and Mechanical Strength

Silicon carbide crucibles are typically made from sintered or reaction-bonded SiC powders, with microstructure playing a definitive role in durability and thermal shock resistance.

Sintered SiC crucibles are created with solid-state or liquid-phase sintering at temperature levels over 2000 ° C, typically with boron or carbon additives to enhance densification and grain limit communication.

This procedure generates a fully dense, fine-grained structure with minimal porosity (

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